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The characteristic of onductor materials are band gap width, resistivity, carrier mobility, non-equilibrium carrier lifetime and dislocation density.The gap width is determined by the electronic state and atomic configuration of the semiconductor, which reflects the energy required for the valence electrons in the atoms of the material to excite from the bound state to the free state.Resistivity and carrier mobility reflect the conductivity of materials.

The non-equilibrium carrier lifetime reflects the relaxation characteristics of the internal carrier in semiconductor materials under the external action (such as light or electric field) from the non-equilibrium state to the equilibrium state.Dislocation is the most common type of defect in crystals.Dislocation density is used to measure the degree of lattice integrity of semiconductor single crystal materials. For amorphous semiconductor materials, this parameter is not available.

The characteristic parameters of semiconductor materials can not only reflect the difference between semiconductor materials and other non-semiconductor materials, but more importantly, can reflect the difference in the magnitude of the characteristics of various semiconductor materials or even the same material under different conditions.